features d trenchfet r power mosfet applications d dc/dc converters d synchronous rectifiers SUU50N03-12P vishay siliconix document number: 72429 s-31872?rev. a, 15-sep-03 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ? ) i d (a) a 3 0 0.012 @ v gs =10v 17.5 30 0.0175 @ v gs =4.5v 14.5 d g s n-channel mosfet order number: SUU50N03-12P to-251 s gd top view and drain-tab absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs ? 20 v c o n t i n u o u s d r a i n c u r r e n t a t a =25 _ c i d 17.5 continuous drain current a t a = 100 _ c i d 12.4 pulsed drain current i dm 40 a continuous source current (diode conduction) a i s 5 avalanche current l = 0 1 m h i as 30 single pulse avalanche energy l=0.1mh e as 45 mj m a x i m u m p o w e r d i s s i p a t i o n t c =25 _ c p d 46.8 w maximum power dissipation t a =25 _ c p d 6.5 a w operating junction and storage temperature range t j ,t stg --55 to 175 _ c thermal resistance ratings parameter symbol typical maximum unit m a x i m u m j u n c t i o n t o a m b i e n t a t 10 sec r 18 23 maximum junction-to-ambient a steady state r thja 40 50 _ c/w maximum junction-to-case r thjc 2.6 3.2 c / notes a. surface mounted on fr4 board, t 10 sec. www..net
SUU50N03-12P vishay siliconix www.vishay.com 2 document number: 72429 s-31872?rev. a, 15-sep-03 specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250 m a 30 v gate threshold voltage v gs(th) v ds =v gs ,i d = 250 m a 1.0 3.0 v gate-body leakage i gss v ds =0v,v gs = ? 20 v ? 100 na z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v ds =24v,v gs =0v 1 m a zero gate v oltage drain current i dss v ds =24v,v gs =0v,t j = 125 _ c 50 m a on-state drain current b i d(on) v ds =5v,v gs =10v 40 a v gs =10v,i d =20a 0.010 0.012 drain-source on-state resistance b r ds(on) v gs =10v,i d =20a,t j = 125 _ c 0.017 ? d r a i n s o u r c e o n s t a t e r e s i s t a n c e r d s ( o n ) v gs =4.5v,i d =15a 0.0138 0.0175 ? dynamic a input capacitance c iss 1600 output capacitance c oss v gs =0v,v ds =25v,f=1mhz 285 pf reverse transfer capacitance c rss 140 p gate resistance r g 1.5 ? total gate charge c q g 28 42 gate-source charge c q gs v ds =15v, v gs =10v,i d =50a 6.0 nc gate-drain charge c q gd d s 5 , g s 0 , d 5 0 5.0 c turn-on delay time c t d(on) 9 15 rise time c t r v d d =15 v ,r l =0.3 ? 15 25 n s turn-off delay time c t d(off) v d d = 1 5 v , r l = 0 . 3 ? ? 50 a, v gen =10v,r g =2.5 ? 20 30 ns fall time c t f g 12 20 source-drain diode ratings and characteristic (t c =25 _ c) pulsed current i sm 100 a diode forward voltage b v sd i f =40a,v gs =0v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ m s 25 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 m s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 _ c unless noted) 0 20 40 60 80 012345 0 20 40 60 80 0123456 output characteristics transfer characteristics v ds -- drain-to-source voltage (v) -- drain current (a) i d v gs -- gate-to-source voltage (v) -- drain current (a) i d 25 _ c -- 5 5 _ c t c = 125 _ c v gs =10thru5v 3v 4v www..net
SUU50N03-12P vishay siliconix document number: 72429 s-31872?rev. a, 15-sep-03 www.vishay.com 3 typical characteristics (25 _ c unless noted) 0 2 4 6 8 10 0 6 12 18 24 30 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080 0 20 40 60 80 0 1020304050 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 capacitance gate charge transconductance on-resistance vs. drain current -- gate-to-source voltage (v) -- on-resistance ( q g -- total gate charge (nc) i d -- drain current (a) v ds -- drain-to-source voltage (v) c -- capacitance (pf) r ds(on) ? ) v gs -- transconductance (s) g fs v ds =15v i d =50a v gs =10v v gs =4.5v c rss t c =--55 _ c 25 _ c 125 _ c c iss i d -- drain current (a) c oss (normalized) -- on-resistance ( r ds(on) ? ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 --50 --25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j -- junction temperature ( _ c) v sd -- source-to-drain voltage (v) -- source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs =10v i d =15a t j =25 _ c t j = 150 _ c 0 10 www..net
SUU50N03-12P vishay siliconix www.vishay.com 4 document number: 72429 s-31872?rev. a, 15-sep-03 thermal ratings 0 4 8 12 16 20 0 25 50 75 100 125 150 175 safe operating area v ds -- drain-to-source voltage (v) -- drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a =25 _ c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt temperature t a -- ambient temperature ( _ c) -- drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1ms 10 ms 100 ms dc, 100 s 10, 100 m s 1s 1000 100 0.1 10 s limited by r ds(on) 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 110 0.2 0.1 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse www..net
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